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1 IPS70R600P7S rev.2.1,2018-02-13 final data sheet ipaksl mosfet 700vcoolmosap7powertransistor coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies. thelatestcoolmos?p7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,tv,etc. thenewseriesprovidesallthebenefitsofafastswitchingsuperjunction mosfet,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. features ?extremelylowlossesduetoverylowfomr ds(on) *q g andr ds(on) *e oss ?excellentthermalbehavior ?integratedesdprotectiondiode ?lowswitchinglosses(e oss ) ?productvalidationacc.jedecstandard benefits ?costcompetitivetechnology ?lowertemperature ?highesdruggedness ?enablesefficiencygainsathigherswitchingfrequencies ?enableshighpowerdensitydesignsandsmallformfactors potentialapplications recommendedforflybacktopologiesforexampleusedinchargers, adapters,lightingapplications,etc. pleasenote: formosfetparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j=25c 700 v r ds(on),max 0.6 w q g,typ 10.5 nc i d,pulse 20.5 a e oss @ 400v 1.2 j v (gs)th,typ 3 v esd class (hbm) 2 type/orderingcode package marking relatedlinks IPS70R600P7S pg-to 251-3 70s600p7 see appendix a tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
2 700vcoolmosap7powertransistor IPS70R600P7S rev.2.1,2018-02-13 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
3 700vcoolmosap7powertransistor IPS70R600P7S rev.2.1,2018-02-13 final data sheet 1maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 8.5 5.0 a t c = 20c t c = 100c pulsed drain current 2) i d,pulse - - 20.5 a t c =25c application (flyback) relevant avalanche current, single pulse 3) i as - - 3.2 a measured with standard leakage inductance of transformer of 7 m h mosfet dv/dt ruggedness dv/dt - - 100 v/ns v ds =0...400v gate source voltage v gs -16 -30 - - 16 30 v static; ac (f>1 hz) power dissipation p tot - - 43.1 w t c =25c operating and storage temperature t j , t stg -40 - 150 c - continuous diode forward current i s - - 5.9 a t c =25c diode pulse current 2) i s,pulse - - 20.5 a t c = 25c reverse diode dv/dt 4) dv/dt - - 1 v/ns v ds =0...400v, i sd <= i s , t j =25c maximum diode commutation speed 4) di f /dt - - 50 a/ m s v ds =0...400v, i sd <= i s , t j =25c insulation withstand voltage v iso - - n.a. v v rms , t c =25c, t=1min 2thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction r thjc - - 2.9 c/w - thermal resistance, junction - ambient r thja - - 62 c/w leaded thermal resistance, junction - ambient for smd version r thja - - - c/w n.a. soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6 mm (0.063 in.) from case for 10s 1) limited by t j max . t j = 20c. maximum duty cycle d=0.5 2) pulse width t p limited by t j,max 3) proven during verification test. for explanation please read an - coolmos tm 700v p7. 4) v dclink =400v; v ds,peak < v (br)dss ;identicallowsideandhighsideswitchwithidentical r g tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
4 700vcoolmosap7powertransistor IPS70R600P7S rev.2.1,2018-02-13 final data sheet 3electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 700 - - v v gs =0v, i d =1ma gate threshold voltage v (gs)th 2.50 3 3.50 v v ds = v gs , i d =0.09ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =700v, v gs =0v, t j =25c v ds =700v, v gs =0v, t j =150c gate-source leakage current incl. zener diode i gss - - 1 m a v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.49 1.03 0.60 - w v gs =10v, i d =1.8a, t j =25c v gs =10v, i d =1.8a, t j =150c gate resistance r g - 10 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 364 - pf v gs =0v, v ds =400v, f =250khz output capacitance c oss - 7 - pf v gs =0v, v ds =400v, f =250khz effective output capacitance, energy related 1) c o(er) - 17 - pf v gs =0v, v ds =0...400v effective output capacitance, time related 2) c o(tr) - 200 - pf i d =constant, v gs =0v, v ds =0...400v turn-on delay time t d(on) - 14 - ns v dd =400v, v gs =13v, i d =1.4a, r g =5.3 w rise time t r - 5.5 - ns v dd =400v, v gs =13v, i d =1.4a, r g =5.3 w turn-off delay time t d(off) - 63 - ns v dd =400v, v gs =13v, i d =1.4a, r g =5.3 w fall time t f - 23 - ns v dd =400v, v gs =13v, i d =1.4a, r g =5.3 w table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 1.6 - nc v dd =400v, i d =1.4a, v gs =0to10v gate to drain charge q gd - 3.7 - nc v dd =400v, i d =1.4a, v gs =0to10v gate charge total q g - 10.5 - nc v dd =400v, i d =1.4a, v gs =0to10v gate plateau voltage v plateau - 4.4 - v v dd =400v, i d =1.4a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to400v 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to400v tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
5 700vcoolmosap7powertransistor IPS70R600P7S rev.2.1,2018-02-13 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.9 - v v gs =0v, i f =2.5a, t j =25c reverse recovery time t rr - 190 - ns v r =400v, i f =1.4a,d i f /d t =50a/s reverse recovery charge q rr - 0.8 - c v r =400v, i f =1.4a,d i f /d t =50a/s peak reverse recovery current i rrm - 9 - a v r =400v, i f =1.4a,d i f /d t =50a/s tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
6 700vcoolmosap7powertransistor IPS70R600P7S rev.2.1,2018-02-13 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45 50 p tot =f( t c ) diagram2:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram3:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
7 700vcoolmosap7powertransistor IPS70R600P7S rev.2.1,2018-02-13 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 5 10 15 20 25 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram7:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 5 v 5.5 v 6 v 6.5 v 7 v 10 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram8:drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 98% typ r ds(on) =f( t j ); i d =1.8a; v gs =10v tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
8 700vcoolmosap7powertransistor IPS70R600P7S rev.2.1,2018-02-13 final data sheet diagram9:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 0 5 10 15 20 25 25 c 150 c i d =f( v gs ); v ds =20v;parameter: t j diagram10:typ.gatecharge q gate [nc] v gs [v] 0 5 10 15 0 1 2 3 4 5 6 7 8 9 10 400 v 120 v v gs =f( q gate ); i d =1.4apulsed;parameter: v dd diagram11:forwardcharacteristicsofreversediode v sd [v] i f [a] 0 1 2 3 10 -1 10 0 10 1 10 2 25 c 125 c i f =f( v sd );parameter: t j diagram13:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -75 -50 -25 0 25 50 75 100 125 150 175 600 620 640 660 680 700 720 740 760 780 800 820 840 v br(dss) =f( t j ); i d =1ma tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
9 700vcoolmosap7powertransistor IPS70R600P7S rev.2.1,2018-02-13 final data sheet diagram14:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 -1 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =250khz diagram15:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 600 700 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e oss = f (v ds ) tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
10 700vcoolmosap7powertransistor IPS70R600P7S rev.2.1,2018-02-13 final data sheet 5testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
11 700vcoolmosap7powertransistor IPS70R600P7S rev.2.1,2018-02-13 final data sheet 6packageoutlines figure1outlinepg-to251-3,dimensionsinmm/inches tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d dim a 2.0 06-04-2016 issue date european projection 0.035 0.018 0.018 0.235 0.025 0.182 0.250 0.130 0.087 0.205 0.035 0.026 0.197 millimeters 4.63 3.30 0.88 3 2.29 4.57 min 0.90 0.46 0.65 5.98 0.46 6.35 2.20 0.64 5.00 5.21 1.28 3.60 0.60 6.73 0.89 6.22 0.60 1.15 1.14 2.40 max 5.50 5.60 min 0.205 3 0.090 0.180 0.050 0.142 inches max 0.024 0.045 0.245 0.024 0.035 0.094 0.045 0.265 0.217 0.220 0 2.0 scale 4mm 0 document no. z8b00181052 revision 01 0.033 0.85 1.25 0.049 a1 b b2 b4 c c2 d d1 e e1 e e1 n l l1 l2 5.20
12 700vcoolmosap7powertransistor IPS70R600P7S rev.2.1,2018-02-13 final data sheet 7appendixa table11relatedlinks ? ifxcoolmosap7webpage: www.infineon.com ? ifxdesigntools: www.infineon.com tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d dim a 2.0 06-04-2016 issue date european projection 0.035 0.018 0.018 0.235 0.025 0.182 0.250 0.130 0.087 0.205 0.035 0.026 0.197 millimeters 4.63 3.30 0.88 3 2.29 4.57 min 0.90 0.46 0.65 5.98 0.46 6.35 2.20 0.64 5.00 5.21 1.28 3.60 0.60 6.73 0.89 6.22 0.60 1.15 1.14 2.40 max 5.50 5.60 min 0.205 3 0.090 0.180 0.050 0.142 inches max 0.024 0.045 0.245 0.024 0.035 0.094 0.045 0.265 0.217 0.220 0 2.0 scale 4mm 0 document no. z8b00181052 revision 01 0.033 0.85 1.25 0.049 a1 b b2 b4 c c2 d d1 e e1 e e1 n l l1 l2 5.20
13 700vcoolmosap7powertransistor IPS70R600P7S rev.2.1,2018-02-13 final data sheet revisionhistory IPS70R600P7S revision:2018-02-13,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.0 2016-10-11 release of final version 2.1 2018-02-13 corrected front page text trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2018infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie). withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseofthe productofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityofcustomers technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d dim a 2.0 06-04-2016 issue date european projection 0.035 0.018 0.018 0.235 0.025 0.182 0.250 0.130 0.087 0.205 0.035 0.026 0.197 millimeters 4.63 3.30 0.88 3 2.29 4.57 min 0.90 0.46 0.65 5.98 0.46 6.35 2.20 0.64 5.00 5.21 1.28 3.60 0.60 6.73 0.89 6.22 0.60 1.15 1.14 2.40 max 5.50 5.60 min 0.205 3 0.090 0.180 0.050 0.142 inches max 0.024 0.045 0.245 0.024 0.035 0.094 0.045 0.265 0.217 0.220 0 2.0 scale 4mm 0 document no. z8b00181052 revision 01 0.033 0.85 1.25 0.049 a1 b b2 b4 c c2 d d1 e e1 e e1 n l l1 l2 5.20

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